Special characterization techniques for advanced FDSOI process

session: Advanced Processes and CharacterizationInternational audienceNanosize SOI materials and devices feature two oxides, three interfaces and two possible channels, more or less overlapped. This complexity cannot be addressed with conventional characterization methods developed for bulk-Si devices. We review appropriate techniques efficient in FDSOI structures. The latest advances in pseudo-MOSFET method are described and selected examples illustrate the properties of recent SOI materials (UTBB, GeOI, sSOI, etc). The gated diode is a powerful characterization tool that complements the sophisticated MOSFET methods (split capacitance, current transients, noise, magnetoresistance, etc.). We discuss recent data for FDSOI as well as more unusual results induced by coupling and floating body mechanisms. Size effects (ultrathin film and short-channel) are shown to affect the interpretation of mobility and threshold voltage in FDSOI

A capacitor-less 1T-DRAM on SOI based on double gate operation

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Unusual gate current transient behavior in SOI MOSFETs

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Novel capacitor-less 1T-DRAM using MSD effect

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From floating-body memory to unified memory: concepts and bets

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New memory effect for fully depleted SOI MOSFET

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